BLOCK-PULSE SERIES ANALYSIS OF LINEAR SYSTEMS INCORPORATING OBSERVERS = ANALYSE PAR DES SERIES DE BLOCS D'IMPULSIONS DES SYSTEMES LINEAIRES COMPORTANT DES OBSERVATEURSKAWAJI S.1983; INTERNATIONAL JOURNAL OF CONTROL; ISSN 0020-7179; GBR; DA. 1983; VOL. 37; NO 5; PP. 1113-1120; BIBL. 9 REF.Article

DESIGN PROCEDURE OF OBSERVER FOR THE LINEAR FUNCTIONS OF THE STATE = PROCEDURE DE SYNTHESE D'UN OBSERVATEUR POUR LES FONCTIONS LINEAIRES DE L'ETATKAWAJI S.1980; INT. J. CONTROL; ISSN 0020-7179; GBR; DA. 1980; VOL. 32; NO 3; PP. 381-394; BIBL. 12 REF.Article

ON THE DESIGN OF OPTIMAL DYNAMIC CONTROLLERS USING THE PARTIAL STATE OBSERVERKAWAJI S.1981; INT. J. CONTROL; ISSN 0020-7179; GBR; DA. 1981; VOL. 34; NO 4; PP. 713-730; BIBL. 13 REF.Article

ON THE DESIGN OF DISCRETE-TIME OPTIMAL DYNAMIC CONTROLLERS USING THE PARTIAL STATE OBSERVER = SUR LA SYNTHESE DES REGULATEURS DYNAMIQUES OPTIMAUX A TEMPS DISCRET UTILISANT UN OBSERVATEUR D'ETAT PARTIELKAWAJI S.1983; INTERNATIONAL JOURNAL OF CONTROL; ISSN 0020-7179; GBR; DA. 1983; VOL. 37; NO 3; PP. 471-491; BIBL. 11 REF.Article

PARTIAL STATE OBSERVER CONSTRUCTION BY GENERALIZED MATRIX INVERSE = CONSTRUCTION D'UN OBSERVATEUR D'ETAT PARTIEL PAR LA MATRICE INVERSE GENERALISEEKAWAJI S.1982; INT. J. CONTROL; ISSN 0020-7179; GBR; DA. 1982; VOL. 36; NO 2; PP. 353-360; BIBL. 10 REF.Article

OXIDE THICKNESS EFFECTS ON ELECTRON SCATTERINGS AT A THERMALLY GROWN SI-SIO₂ INTERFACE.YAGI A; KAWAJI S.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 349-350; BIBL. 3 REF.Article

EFFECTS OF NITROGEN ANNEALING ON ELECTRON SCATTERINGS IN SI-SIO² INTERFACEYAGI A; KAWAJI S.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 3; PP. 261-263; BIBL. 6 REF.Article

HALL EFFECT IN SILICON MOS INVERSION LAYERS UNDER STRONG MAGNETIC FIELDS.WAKABAYASHI J; KAWAJI S.1978; J. PHYS. SOC. JAP.; JPN; DA. 1978; VOL. 44; NO 6; PP. 1839-1849; BIBL. 17 REF.Article

WALSH SERIES ANALYSIS IN OPTIMAL CONTROL SYSTEMS INCORPORATING OBSERVERS = ANALYSE BASEE SUR LES SERIES DE WALSH DANS LES SYSTEMES DE COMMANDE OPTIMALE INCORPORANT DES OBSERVATEURSKAWAJI S; TADA R.1983; INTERNATIONAL JOURNAL OF CONTROL; ISSN 0020-7179; GBR; DA. 1983; VOL. 37; NO 3; PP. 455-462; BIBL. 8 REF.Article

ELECTRONIC PROPERTIES OF TWO-DIMENSIONAL SYSTEMSKAWAJI S ED.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 98; NO 1-3; 642 P.; BIBL. DISSEM.Conference Paper

LINEAR FUNCTION OBSERVER WITH POSSIBLY MINIMAL DIMENSION.FURUTA K; KAWAJI S.1977; I.E.E.E. TRANS. AUTOMAT. CONTROL; U.S.A.; DA. 1977; VOL. 22; NO 6; PP. 977-980; BIBL. 7 REF.Article

CARRIER CONCENTRATION DEPENDENCE AND TEMPERATURE DEPENDENCE OF MOBILITY IN SILICON (100) N-CHANNEL INVERSION LAYERS AT LOW TEMPERATURESKAWAGUCHI Y; SUZUKI T; KAWAJI S et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 3; PP. 257-259; BIBL. 5 REF.Article

ANDERSON LOCALIZATION IN SILICON MOS INVERSION LAYERS AT LOW DENSITIESKAWAJI S; NAMIKI M; HOSHI N et al.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 49; NO 4; PP. 1637-1638; BIBL. 13 REF.Article

ANGULAR DEPENDENT NEGATIVE MAGNETORESISTANCE IN SI-MOS (111) INVERSION LAYERSKAWAGUCHI Y; KITAHARA H; KAWAJI S et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 11; PP. 701-703; BIBL. 12 REF.Article

ANALYSIS OF TEMPERATURE DEPENDENT HALL CONDUCTIVITY IN SILICON INVERSION LAYERS IN STRONG MAGNETIC FIELDS BY A MOBILITY EDGE MODELKAWAJI S; WAKABAYASHI J; MORIYAMA J et al.1981; J. PHYS. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 12; PP. 3839-3840; BIBL. 11 REF.Article

Possible ring-exchange interaction and Aharonov-Bohm effect in two-dimensional electron solidsOKAMOTO, T; KAWAJI, S.Journal of the Physical Society of Japan. 1996, Vol 65, Num 12, pp 3716-3719, issn 0031-9015Article

INFLUENCE OF CRYSTALLINE DEFECTS AND RESIDUAL STRESS ON THE ELECTRICAL CHARACTERISTICS OF SOS MOS DEVICES.ONGA S; HATANAKA K; KAWAJI S et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 2; PP. 413-422; BIBL. 14 REF.Article

Fuzzy hybrid control of DC servomotorMATSUNAGA, N; KAWAJI, S.Electrical engineering in Japan. 1991, Vol 111, Num 6, pp 105-111, issn 0424-7760Article

ELECTRICAL CHARACTERISTICS OF DEPLETRIN-TYPE SOS MOS DEVICESONGA S; KO WH; HATANAKA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1675-1682; BIBL. 12 REF.Article

Experiments on scaling relation of conductivities in silicon MOS inversion layers in strong magnetic fieldsKAWAJI, S; WAKABAYASHI, J.Journal of the Physical Society of Japan. 1987, Vol 56, Num 1, pp 21-24, issn 0031-9015Article

Model reduction by walsh function techniquesKAWAJI, S; SHIOTSUKI, T.Mathematics and computers in simulation. 1985, Vol 27, Num 5-6, pp 479-484, issn 0378-4754Article

State observer for quadratic systemsKAWAJI, S; UMETSU, Y.International Journal of Control. 1983, Vol 38, Num 3, pp 577-588, issn 0020-7179Article

Spin-orbit interaction in two dimensional systems in InAs n-inversion layersKAWAGUCHI, Y; TAKAYANAGI, I; KAWAJI, S et al.Journal of the Physical Society of Japan. 1987, Vol 56, Num 4, pp 1293-1296, issn 0031-9015Article

Valley splitting in Si(100) n-channel inversion layers determined by a tilted field methodWAKABAYASHI, J; KIMURA, S; KAWAJI, S et al.Journal of the Physical Society of Japan. 1985, Vol 54, Num 10, pp 3885-3888, issn 0031-9015Article

Activation energies of the fractional quantum Hall effect in GaAs/AlGaAs heterostructuresWAKABAYASHI, J; KAWAJI, S; YOSHINO, J et al.Journal of the Physical Society of Japan. 1986, Vol 55, Num 4, pp 1319-1326, issn 0031-9015Article